, d nc. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 power field effect transistor n-channel enhancement-mode silicon gate twos these tmos power fets are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ? silicon gate for fast switching speeds ? switching times specified at 100"c ? designer's data ? iqss- vds(on)- vgs(th) anMTM3N60 mtp3n55 mtp3n60 tmos power fets 3 amperes 'ds(on) = 2.5 ohms 550 and 600 volts mtm3nbo to-zmaa co-&oab nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
electrical characteristics (tc - 25-c unless otherwise noted) characteristic symbol min unit off characteristics drain-source breakdown voltage (vgs - 0, id = 0.26 ma) mtp3nb5 mtm/mtp3n60 zero gate voltage drain current (v[>s = rated vdss. vgs - 0] (vos - 0.8 rated vdss, vgs = 0, tj = 125'c) gale-body leakage currant, forward (vqsf = 20 vdc, vps - 01 gate-body leakage current, reverse [vqsr ? 20 vdc, vqs = 0) vibridss loss 'gssf igssr 650 600 - _ - - - 0.2 1 100 100 vdc madc nadc nadc on characteristics' gate threshold voltage wos - vgs, 'd = 1 ma> tj = 100'c static drain-source on-reslstanee (vgs " 10 vdc, id - 1.5 adc) drain-source on-voltago (vqs = 101/1 (id - 3 adc) (id - 1.6 adc, tj = loo-c) forward transconductance (vds = ib v, id ? 1.5 a) vqs(th) 'os(on) vds(on) 9fs 2 1.6 ? i 1.6 4.5 4 2.5 9 7.5 ? vdc ohms vdc mhos dynamic characteristics input capacitance output capacitance reverse transfer capacitance (vos - 26 v, vqs - 0, f - 1 mhi) see figure 11 clss cobs cras ? ? - 1000 300 80 pf switching characteristics* (tj - 100'c) turn-on delay time rise time turn-off delay time fell time total gate charge gate-source charge gate-drain charge (vdd - 25 v, id - 0.6 rated id "gen " 60 ohms) see figures 9, 13 and 14 ivds - 0.8 rated vdss. id = rated id, vqs - 'o vi see figure 12 'cf(on) tr ?d(off) 0 v v \ ?^_ ^ ">>^_ c| cq 5s 55 ? 10 m 30 vq& orain-to-source voltage [volts) figure 11. capacitance variation vgs, gate-tlkounce voltage ivoltsi 1 ( i ' 1 tj-2fc '0 = 3a , /, >%> > ^ // fx vdo v/ \/\v|)0 = 100 'vdo = 300 -480 4 8 12 16 21 oj, total gate chameinc! figure 12. gate charge versus gate-to-source voltage resistive switching figure 13. switching test circuit -pulse width- figure 14. switching waveforms outline dimensions style 3. pwh. gat6 1souace case own nous: i. (mtemsonnc amd touruwnckr ansi nuu, tsu i. contfoujw dmensott inch. 1 ail rules am) notes associated with refetunceo to 104aa outuhe siuu apfiv. to-2ioab
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